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| DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB909A; BB909B VHF variable capacitance diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diodes FEATURES * Excellent linearity * Matched to 2.5% * Hermetically sealed leaded glass SOD68 (DO-34) package * C28: 2.9 pF; ratio: 13.5 * Low series resistance. APPLICATIONS * Electronic tuning in VHF television tuners, band B up to 460 MHz * VCO. DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance BB909A CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 C; see Fig.3 f = 100 MHz; note 1 see Figs 2 and 4 VR = 1 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 28 V; f = 1 MHz BB909B VR = 1 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 28 V; f = 1 MHz C d ( 1V ) -------------------C d ( 28V ) C d --------Cd Note 1. VR is the value at which Cd = 30 pF. capacitance ratio f = 1 MHz handbook, halfpage k BB909A; BB909B a MAM234 Cathode side indicated by a green band on a black body (BB909A and BB909B). Additional red band (BB909A only). Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature - - -55 -55 MIN. MAX. 30 20 +150 +100 V mA C C UNIT MIN. - - - 31 - 2.6 33.5 - 2.8 12 TYP. - - - - 23 - - 25 - - MAX. 10 200 0.9 - - 3 - - 3.2 15 UNIT nA nA pF pF pF pF pF pF capacitance matching VR = 1 to 28 V - - 2.5 % 1996 May 03 2 Philips Semiconductors Product specification VHF variable capacitance diodes GRAPHICAL DATA BB909A; BB909B MBE873 handbook, full pagewidth 50 Cd (pF) 40 30 20 10 0 10 -1 f = 1 MHz; Tj = 25 C. 1 10 VR (V) 10 2 Fig.2 Diode capacitance as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC816 10 3 handbook, halfpage MLC815 IR (nA) TC d (K-1) 102 10 4 10 0 50 T j ( C) o 100 10 5 10 1 1 10 VR (V) 102 Tj = 0 to 85 C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 1996 May 03 3 |
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